欢迎来到上海巨纳科技有限公司网站！欢迎来到上海巨纳科技有限公司网站！
13761090949
相关文章
Related Articles详细介绍
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
产品咨询
联系我们
上海巨纳科技有限公司 公司地址：上海市虹口区宝山路778号海伦国际大厦5楼 技术支持：化工仪器网扫一扫 更多精彩
微信二维码
网站二维码
