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InSe 硒化铟晶体 (Indium Selenide)

简要描述:InSe (indium selenide) is the first commercially available InSe layered materials in the field.

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  • 更新时间:2018-07-10
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详细介绍

InSe (indium selenide) is the first commercially available InSe layered materials in the field. Our single crystal InSe crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using three different state-of-art techniques: i) Bridgman growth, ii) flux zone growth, and iii) chemical vapor transport (CVT) growth. The latter (CVT) produces contaminated samples. Flux zone technique is suitable for good crystallization but crystal sizes are limited to ~5mm. In contrast, Brigmann method offers good crystallinity as well as large size (larger than 1cm). Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 
Properties of InSe crystals by 2Dsemiconductors USA

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上海巨纳科技有限公司 公司地址:上海市虹口区宝山路778号海伦国际大厦5楼   技术支持:化工仪器网
  • 联系人:袁文军
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