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GO 氧化石墨烯 (Graphene Oxide)

简要描述:Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yi

  • 产品型号:2D Semiconductor
  • 厂商性质:生产厂家
  • 更新时间:2018-07-09
  • 访  问  量:121

详细介绍

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yield optically active material and increasing the average grain size (flake size). Unlike many other graphene oxides, this product is optically active and is ready for 2D semiconductor research. Each growth batch has been characterized by Auger electron and x-ray photoelectron spectroscopy to determine the stoichometry; Raman, PL spectroscopy, and optical absorption for optical properties tests; AFM measurements for the atomic flatness. Product displays PL at ~2.5 eV, sub-bands at 2.2 and 2.0 eV, and broad defect lines at 1.7 eV. Raman spectroscopy measurements yield D, G, 2D, and G+D peaks. Samples come fully saturated with oxygen and the optical properties of the material can be tuned by simple heat treatment. The product is ideal for yielding monolayer onto various substrates within 2-10 minutes. Please contact us for more information.

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上海巨纳科技有限公司 公司地址:上海市虹口区宝山路778号海伦国际大厦5楼   技术支持:化工仪器网
  • 联系人:袁文军
  • QQ:494474517
  • 公司座机:86-021-56830191
  • 邮箱:yuanwenjun@sunano.com.cn

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